| 摘要 |
PROBLEM TO BE SOLVED: To suppress the deterioration in image quality generated by an afterimage due to photoelectric charges accumlated in former image pickup, in a threshold modulation-type solid-state imaging element. SOLUTION: The solid-state imaging device is provided with a pixel array in which a plurality of unit pixels each having a photdiode and an insulated gate type field effect transistor for detecting photoelectric charges are arranged, and a control circuit for controlling the operation of the pixel array. The control circuit has a drain control circuit for supplying any one of a constant voltage, a constant current or a constant electric charge to the drain diffusion region. When discharging a predetermined conductivity type electric charges accumulated in an accumulating region, the control circuit brings a junction region consisting of a first conductivity type semiconductor substrate and a second conductivity type semiconductor layer into a state of being biased in a forward direction by any one of the constant voltage, constant current and constant electric charge which is previously supplied from the drain control circuit to the drain diffusion region, thereby bringing the accumulating region into a state that electric charges of the predetermined conductivity type are accumulated at a predetermined quantity. COPYRIGHT: (C)2004,JPO&NCIPI
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