| 摘要 |
PROBLEM TO BE SOLVED: To provide a composite semiconductor substrate and its manufacturing method by which the formation of slips, dislocation, lattice defects, and HF defects in a single-crystal semiconductor layer is prevented by relieving the thermal stress generated in a heat-treating step performed for increasing the lamination strength between substrates, and to provide an electrooptic device and electronic equipment. SOLUTION: The method of manufacturing the composite semiconductor substrate 600 constituted by laminating a semiconductor substrate provided with the single-crystal semiconductor layer 220 upon a supporting substrate 500 includes a step of forming a laminated substrate by laminating the semiconductor substrate provided with the single-crystal semiconductor layer 220 upon the supporting substrate 500, a step of performing ion implantation into a prescribed region of the semiconductor layer 220 in the laminated substrate, and a step of heat-treating the laminated substrate after the ion implantation is performed. COPYRIGHT: (C)2004,JPO&NCIPI
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