发明名称 Memory component repair method for determining a repair solution for a memory device in a test system tests areas of the memory device in sequence for error data
摘要 <p>Error locations (FA) are generated from locations in memory areas and associated error data. Error location values indicate defective areas in a memory device (21). The error locations are stored in an error location memory (26) in a test system with a test device (20). Using the stored error locations determines a repair solution. Independent claims are also included for the following: (a) A test device for determining a repair solution for a memory device connected to the test device; (b) and for a test system with a test device; (c) and for a memory device with a test circuit.</p>
申请公布号 DE10307027(A1) 申请公布日期 2004.09.09
申请号 DE2003107027 申请日期 2003.02.20
申请人 INFINEON TECHNOLOGIES AG 发明人 FRANKOWSKY, GERD
分类号 G11C29/00;G11C29/44;G11C29/56;(IPC1-7):G11C29/00 主分类号 G11C29/00
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