| 摘要 |
<P>PROBLEM TO BE SOLVED: To immediately remove coloidal silica as a polishing agent component from a wafer surface after polishing, to make a residual amount and time on the surface as small as possible, and further to prevent and restrict the adhesion reduction and the diffusion of a heavy metal to the wafer surface after the polishing. <P>SOLUTION: In a polishing device, at a first step, the polishing agent which uses the coloidal silica as a principal component is supplied, while a semiconductor wafer is pushed against a surface plate to which a rotating polishing cloth is pasted, thereby performing a semiconductor wafer polishing. At a second step, in the polishing device which has executed the first step, a pH buffer solution is supplied, while a pH buffer solution process is carried out in which the semiconductor wafer is pushed against the rotating surface plate. At a third step, in the polishing device which has executed the second step, successively pure water is supplied, while a pure water process is carried out in which the semiconductor wafer is pushed against the rotating surface plate. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
