| 摘要 |
An ultra-hard semiconductive polycrystalline diamond (PCD) material formed with semiconductive diamond particles doped with and additive, as for example, Li, Be or Al and/or insulative diamond particles having semiconductive surfaces, tools incorporating the same, and methods for forming the same, are provided. The ultra-hard PCD material may be formed using a layer of insulative diamond grit feedstock that includes additives therein, then sintering to convert a plurality of the diamond crystals to include a semiconductive surface. In another embodiment, the ultra-hard PCD material is formed by sintering semiconductive diamond grit feedstock consisting of diamond crystals doped with an additive as for example Li, Al or Be. The ultra-hard semiconductive PCD cutting layer exhibits increased cuttability, especially in EDM and EDG cutting operations. A cutting element is provided having such a PCD layer. Furthermore, a bit is provided having a cutting element having such a PCD layer.
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