| 摘要 |
In a method of uniformly forming a thin film on a wafer and an apparatus of using the same, after supplying a first gas, a second gas and a third gas into a reaction chamber in which a wafer is loaded, a thin film is formed on the wafer from the first gas and the second gas. The third gas stabilizes the second gas. A wafer holder is disposed in the reaction chamber. A gas-supplying unit extended to the reaction chamber supplies more gas to the central portion of the wafer than to a peripheral portion of the wafer. The contaminant particles formed from the second gas are removed by using the gas-supplying unit and the third gas. The first gas is supplied more at the central portion of the wafer than at a peripheral portion of the wafer, thereby forming a thin film of high quality on the wafer.
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