发明名称 Semiconductor pressure sensor having diaphragm
摘要 A semiconductor pressure sensor includes a semiconductor substrate having a diaphragm for receiving pressure and a bridge circuit for detecting a distortion of the diaphragm corresponding to the pressure. The bridge circuit includes a pair of first gauge resistors and a pair of second gauge resistors. The first gauge resistors are disposed on a center of the diaphragm, and the second gauge resistors are disposed on a periphery of the diaphragm. Each first gauge resistor has a first resistance, which is larger than a second resistance of each second gauge resistor. The TNO property of the sensor is improved, so that the sensor has high detection accuracy.
申请公布号 US2004173027(A1) 申请公布日期 2004.09.09
申请号 US20040785980 申请日期 2004.02.26
申请人 KATSUMATA TAKASHI;TOYODA INAO;TANAKA HIROAKI 发明人 KATSUMATA TAKASHI;TOYODA INAO;TANAKA HIROAKI
分类号 B81B3/00;G01L1/22;G01L9/00;G01L9/04;G01L19/04;H01L29/84;(IPC1-7):G01L9/00 主分类号 B81B3/00
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