发明名称 |
Semiconductor pressure sensor having diaphragm |
摘要 |
A semiconductor pressure sensor includes a semiconductor substrate having a diaphragm for receiving pressure and a bridge circuit for detecting a distortion of the diaphragm corresponding to the pressure. The bridge circuit includes a pair of first gauge resistors and a pair of second gauge resistors. The first gauge resistors are disposed on a center of the diaphragm, and the second gauge resistors are disposed on a periphery of the diaphragm. Each first gauge resistor has a first resistance, which is larger than a second resistance of each second gauge resistor. The TNO property of the sensor is improved, so that the sensor has high detection accuracy.
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申请公布号 |
US2004173027(A1) |
申请公布日期 |
2004.09.09 |
申请号 |
US20040785980 |
申请日期 |
2004.02.26 |
申请人 |
KATSUMATA TAKASHI;TOYODA INAO;TANAKA HIROAKI |
发明人 |
KATSUMATA TAKASHI;TOYODA INAO;TANAKA HIROAKI |
分类号 |
B81B3/00;G01L1/22;G01L9/00;G01L9/04;G01L19/04;H01L29/84;(IPC1-7):G01L9/00 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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