| 发明名称 |
Method for producing a hetero-bipolar transistor and hetero-bipolar-transistor |
| 摘要 |
The invention relates to a hetero-bipolar transistor on Ga-As basis which has an advantageous design and to a method for producing the same which allows production of inexpensive and long-term stable components.
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| 申请公布号 |
US2004175895(A1) |
申请公布日期 |
2004.09.09 |
| 申请号 |
US20040486531 |
申请日期 |
2004.02.10 |
| 申请人 |
BEHAMMER DAG |
发明人 |
BEHAMMER DAG |
| 分类号 |
H01L21/331;H01L29/737;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/331 |
| 代理机构 |
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