| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable short wavelength light to be emitted with high intensity, which is superior in monochromaticity in the range from blue color band to green color band, using a group III nitride semiconductor light-emitting element. <P>SOLUTION: In the group III nitride semiconductor light-emitting element, equipped with an emitting part constituted by pinching a multiple quantum well structure constituted by laminating in multiple well layers 202, 204 as n type light-emitting layers which consist of indium-containing group III nitride semiconductor, located intermediately between the n-type barrier layer 101 and the p-type barrier layer 102 which consist of the group III nitride semiconductor, and barrier layers 201, 203, 205 which consist of the group III nitride semiconductor, having larger forbidden band width compared with the well layers 202, 204 and have the same electrical conductivity type as the well layers 202, 204, the relation, between the transition region width Δtv of indium atom concentration at the end of the n type barrier layer 101 side of the well layers 202, 204 which constitute the emitting part and the transition region width Δtv of indium atom concentration at the end of the p-type barrier layer 102 side, is Δtw<Δtv. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
