发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a substrate can be treated easily without causing warping etc., even after the thickness of the substrate is reduced and, at the same time, can eliminate the effects produced in subsequent processes by eliminating the need of the adhesive conventionally used for correcting warping and, in addition, a semiconductor device can be manufactured efficiently, and to provide a semiconductor device manufactured by the method. SOLUTION: After patterning the resist 32 of an etching mask by applying a resist 30 around a substrate 10, the thickness of the substrate 10 is reduced by etching the rear surface 10b of the substrate 10 except the outer peripheral section of the surface 10b. Here, the outer peripheral section of the rear surface 10b is the other part than the region corresponding to a circuit forming region including at least an electronic circuit formed on the active surface 10a of the substrate 10. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004253527(A) 申请公布日期 2004.09.09
申请号 JP20030040955 申请日期 2003.02.19
申请人 SEIKO EPSON CORP 发明人 ISHII MAKOTO
分类号 H01L25/18;H01L21/306;H01L25/065;H01L25/07;(IPC1-7):H01L21/306 主分类号 H01L25/18
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