| 摘要 |
PROBLEM TO BE SOLVED: To enable the effects of bit-line capacitance characteristic of RAM circuits to be overcome, and also obtains efficient charge-to-voltage conversion gain. SOLUTION: A sensing circuit comprises a charge-integrating sensing circuit 4, coupled serially to a discriminator 6. The sensing circuit can be used to detect the logic status of the cells in a random access memory (RAM) system which includes ferroelectric RAMs. COPYRIGHT: (C)2004,JPO&NCIPI
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