发明名称 Dielectric with sidewall passivating layer
摘要 A polymer dielectric material includes a sidewall passivating layer on the opposing sidewall surfaces of an opening in the dielectric layer for a via or trench. The sidewall passivating layer may be deposited on the sidewall surfaces, as well as the bottom surface of an opening having a first depth in the polymer dielectric layer. After the sidewall passivating layer is added, the depth of the opening may be increased to a second depth. The sidewall passivating layer provides a barrier to removal of the polymer dielectric from the sidewalls, preventing or reducing undercutting below a hard mask.
申请公布号 US2004175925(A1) 申请公布日期 2004.09.09
申请号 US20030379061 申请日期 2003.03.04
申请人 PARK HYUN-MOG 发明人 PARK HYUN-MOG
分类号 H01L21/033;H01L21/311;H01L21/768;(IPC1-7):H01L21/44;H01L21/476 主分类号 H01L21/033
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