Oxide film etching method

摘要

The present invention provides an oxide film etching method performed by using an etching apparatus in which an oxide film formed on a target object to be processed is etched by utilizing a plasma generated within the process chamber by application of a high frequency power. The etching gas introduced into the process chamber in the etching step contains a C4F6 gas and an O2 gas, and the ratio C4F6/O2 of the C4F6 gas to the O2 gas falls within a range of 0.7 and 1.5 so as to increase the etching selectivity of the oxide film relative to a resist film.