| 发明名称 |
Composition and method used for chemical mechanical planarization of metals |
| 摘要 |
Compositions for use in CMP processing and methods of CMP processing. The composition utilizes low levels of particulate material, in combination with at least one amino acid, at least one oxidizer, and water to remove a metal layer such as one containing copper to a stop layer with high selectivity.
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| 申请公布号 |
US2004175942(A1) |
申请公布日期 |
2004.09.09 |
| 申请号 |
US20030744285 |
申请日期 |
2003.12.23 |
| 申请人 |
CHANG SONG Y.;EVANS MARK;TAMBOLI DNYANESH;HYMES STEPHEN W. |
发明人 |
CHANG SONG Y.;EVANS MARK;TAMBOLI DNYANESH;HYMES STEPHEN W. |
| 分类号 |
C09G1/02;C09K3/14;H01L21/321;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C09G1/02 |
| 代理机构 |
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