| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, at the time of forming a side wall in a bipolar transistor, the base electrode is etched, because the electrode becomes an etching stopper film for anisotropic etching. SOLUTION: A method of manufacturing a bipolar transistor includes a step of forming an emitter opening by removing a first and a second insulating films by using a specific mask for defining the emitter opening after causing a collector layer, a base layer, and the first and second insulating films to deposit; and a step of burying the emitter opening with a first-conductivity third semiconductor layer, and forming an emitter electrode by performing anisotropic etching. The method also includes a step (J) of removing the first insulating film by wet etching after removing the second insulating film, and then, forming a base electrode and silicifying a collector electrode, the base electrode, and an emitter electrode. COPYRIGHT: (C)2004,JPO&NCIPI
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