METAL OXIDE PRECURSOR SOLUTION, PRECURSOR THIN FILM, METHOD FOR FORMING THE THIN FILM, AND CAPACITOR USING IT

摘要

PROBLEM TO BE SOLVED: To directly form a fine thin film pattern of metal oxide without forming a resist using light of wavelengths of 400 nm or more. SOLUTION: A metal oxide precursor solution is obtained by adding dye absorbing light of wavelengths of 400 nm or more to a solution containing metal alkoxide, metal complex and/or metal carboxylate. The metal oxide precursor solution is applied on a substrate and dried, and then light of wavelengths of 400 nm or more is irradiated on the substrate, whereby part or all of the precursor solution at the irradiated part is changed to be metal oxide amorphous or metal oxide crystalline. The substrate is dry or wet etched to form a thin film pattern in which part or all of the metal oxide precursor is changed to be metal oxide amorphous or metal oxide crystalline. COPYRIGHT: (C)2004,JPO&NCIPI