| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a crystalline semiconductor film which can sufficiently enlarge the size of a crystal grain, and to provide a crystalline semiconductor film. SOLUTION: The method for manufacturing a crystalline semiconductor film includes a process for preparing a semiconductor film 92 formed on an insulating substrate 90, a first crystallization process, and a second crystallization process. The first process forms selectively a melting region 106 containing a first region 102 and a second region 104 whose temperature is higher than the first region, by applying energy to a region including the first region 102 of a semiconductor film 92 and the second region 104 adjacent to the first region, makes crystal grain 108A grow in the first region 102 adjacent to a non-melting region 100; and makes the crystal grain grow horizontally toward the second region 104. The second process makes the crystal grain grow further horizontally to a third region by applying energy to the third region 112 including a part of the melting region existing in the growth direction side of growth edge 110 at least. COPYRIGHT: (C)2004,JPO&NCIPI
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