| 发明名称 |
Semiconductor device having trench gate structure and method for manufacturing the same |
| 摘要 |
A method for manufacturing a semiconductor device includes the steps of: forming a trench in a substrate; forming a conductive film in the trench through an insulation film; and annealing the substrate at an annealing temperature after the step of forming the conductive film so that a damage in the insulation film is removed at the annealing temperature. The device <custom-character file="US20040173845A1-20040909-P00999.TIF" wi="151.6" he="8.4" id="custom-character-00001" alt="text missing or illegible when filed"/>
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| 申请公布号 |
US2004173845(A1) |
申请公布日期 |
2004.09.09 |
| 申请号 |
US20040790211 |
申请日期 |
2004.03.02 |
| 申请人 |
DENSO CORPORATION |
发明人 |
AOKI TAKAAKI |
| 分类号 |
H01L21/28;H01L21/336;H01L29/423;H01L29/51;H01L29/739;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/28 |
| 代理机构 |
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