Buried magnetic tunnel-junction memory cell and methods for fabricating

摘要

A magnetic memory cell (20) made on a substrate (50) has a first metal conductor (40) , a first magnetic layer (80) disposed on the first metal conductor, a planar interlayer dielectric (ILD) (35) having a via opening (65) extending through it to the first magnetic layer (80) , a buried tunnel junction (75) over the first magnetic layer within the via opening, a second magnetic layer (60) filling the via opening and burying the tunnel junction, and a second metal conductor (30) coupled to the second magnetic layer. Methods for using the memory cell in memories (10) and other devices and methods specially adapted for fabrication of the memory cell are disclosed.