| 摘要 |
A single transistor type magnetic random access memory device and a method of operating and manufacturing the single transistor type magnetic random access memory device. The single transistor type magnetic random access memory device includes a substrate, first and second doped regions, a gate dielectric layer, a magnetic tunnel junction, word lines, bit lines, and an insulating layer. The first and second doped regions are formed by implanting dopants into the semiconductor substrate and are spaced apart from each other. The gate dielectric layer is formed on a portion of the semiconductor substrate between the first and second doped regions. The magnetic tunnel junction is formed on the gate dielectric layer. The word lines are formed on the MTJ and extend in a first direction which is the same direction as the second doped region. The bit lines are connected to the first doped region in a second direction perpendicular to the first direction. The insulating layer covers the gate dielectric layer, the MTJ, and the word lines to insulate the gate dielectric layer, the MTJ, and the word lines from the bit lines. The first and second doped regions, the gate dielectric layer, and the MTJ constitute a single transistor. The single transistor type magnetic random access memory device has a simple circuit structure. Thus, it is easy to make the single transistor type magnetic random access memory device highly integrated structure and the life of the single transistor type random access memory device can be prolonged. <IMAGE> |
