STATIC RAM DEVICE WHICH IS STABLY OPERATED AT LOW VOLTAGE, ESPECIALLY INCLUDING SELECTION VOLTAGE GENERATION CIRCUIT

摘要

PURPOSE: A static RAM device is provided to assure low Vcc margin during write operation at a low power supply voltage. CONSTITUTION: According to the static RAM device, a selection voltage generation circuit(200) comprises a write enable buffer circuit(202) and a voltage level detector circuit(204) and a boosting circuit(206). The write enable buffer circuit generates a signal(WEWD) by inverting a write operation signal(WE bar). The voltage level detector circuit outputs a detection signal(HVDb) by detecting a level of an operation voltage in response to the signal(WEWD). The boosting circuit receives the signal(WEWD), and outputs an operation voltage or a boosting voltage in response to the detection signal.