发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor device includes a first semiconductor chip (5) having a first terminal (7) on one surface, a second semiconductor chip (1a) which is larger than the first semiconductor chip (5) and on which the first semiconductor chip (5) is stacked and which has a second terminal (3) on one surface, an insulating layer (10) formed on a second semiconductor chip (1a) to cover the first semiconductor chip (5), a plurality of holes (10a) formed in the insulating layer (10) on at least a peripheral area of the first semiconductor chip (5), a via (11a) formed like a film on inner peripheral surfaces and bottom surfaces of the holes (10a) and connected electrically to the second terminal (3) of the second semiconductor chip (1a), a wiring pattern (11b) formed on an upper surface of the insulating layer (10), and an external terminal (14) formed on the wiring pattern (11b). <IMAGE>
申请公布号 EP1455392(A1) 申请公布日期 2004.09.08
申请号 EP20010274912 申请日期 2001.12.07
申请人 FUJITSU LIMITED 发明人 MATSUKI, HIROHISA;AIBA, YOSHITAKA;SATO, MITSUTAKA;OKAMOTO, TADAHIRO
分类号 H01L25/065;H01L21/60;H01L23/12;H01L23/31;H01L23/538;H01L25/04 主分类号 H01L25/065
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