发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor device includes a first semiconductor chip (5) having a first terminal (7) on one surface, a second semiconductor chip (1a) which is larger than the first semiconductor chip (5) and on which the first semiconductor chip (5) is stacked and which has a second terminal (3) on one surface, an insulating layer (10) formed on a second semiconductor chip (1a) to cover the first semiconductor chip (5), a plurality of holes (10a) formed in the insulating layer (10) on at least a peripheral area of the first semiconductor chip (5), a via (11a) formed like a film on inner peripheral surfaces and bottom surfaces of the holes (10a) and connected electrically to the second terminal (3) of the second semiconductor chip (1a), a wiring pattern (11b) formed on an upper surface of the insulating layer (10), and an external terminal (14) formed on the wiring pattern (11b). <IMAGE> |
申请公布号 |
EP1455392(A1) |
申请公布日期 |
2004.09.08 |
申请号 |
EP20010274912 |
申请日期 |
2001.12.07 |
申请人 |
FUJITSU LIMITED |
发明人 |
MATSUKI, HIROHISA;AIBA, YOSHITAKA;SATO, MITSUTAKA;OKAMOTO, TADAHIRO |
分类号 |
H01L25/065;H01L21/60;H01L23/12;H01L23/31;H01L23/538;H01L25/04 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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