Solid-state imaging device, method for manufacturing the same and interline transfer CCD image sensor

摘要

A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode (3) that converts incident light into a signal charge and stores the signal charge; a MOS transistor (4) that is provided for reading out the signal charge stored in the photodiode (3); an element isolation portion (2) that is formed of a STI that is a grooved portion of the semiconductor substrate (10) so that the photodiode (3) and the MOS transistor (4) are isolated from each other; and a deep-portion isolation implantation layer (1) that is formed under the element isolation portion (2) for preventing a flow of a charge from the photodiode (3) to the MOS transistor (4).