Solid-state imaging device

摘要

In each photosensitive cell, a photodiode (101), a transfer gate (102), a floating diffusion layer section (103), an amplifier transistor (104), and a reset transistor (105) are formed in one active region surrounded by a device isolation region. The floating diffusion layer section (103) included in one photosensitive cell is connected not to the amplifier transistor (104) included in that cell but to the gate of the amplifier transistor (104) included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire (111) connects the transfer gates (102) arranged in the same row, and a polysilicon wire (112) connects the reset transistors (105) arranged in the same row. For connection in the row direction, only polysilicon wires are used.