发明名称 |
Integrated schottky barrier diode and manufacturing method thereof |
摘要 |
An integrated Schottky barrier diode chip includes a compound semiconductor substrate, a plurality of Schottky barrier diodes formed on the substrate and an insulating region formed on the substrate by an on implantation. The insulating region electrically separates a portion of a diode at a cathode voltage from a portion of the diode at an anode voltage. Because of the absence of a polyimide layer and trench structures, this planar device configuration results in simpler manufacturing method and improved device characteristics.
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申请公布号 |
US6787871(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20020283331 |
申请日期 |
2002.10.30 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
ASANO TETSURO;ONODA KATSUAKI;NAKAJIMA YOSHIBUMI;MURAI SHIGEYUKI;TOMINAGA HISAAKI;HIRATA KOICHI;SAKAKIBARA MIKITO;ISHIHARA HIDETOSHI |
分类号 |
H01L21/329;H01L21/76;H01L27/06;H01L29/47;H01L29/872;(IPC1-7):H01L27/095 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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