| 发明名称 |
Mos field effect transistor and mos capacitor |
| 摘要 |
A semiconductor device comprising a silicon substrate and an insulating film adjacent thereto and which operates by applying a voltage to an electrode opposed to the silicon substrate with the insulating film interposed between; wherein an intermediate film is contained that is located between the silicon substrate and the insulating film and has a thickness of 0.2-1 nm. A method for manufacturing such a semiconductor device is also disclosed.
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| 申请公布号 |
US6787863(B2) |
申请公布日期 |
2004.09.07 |
| 申请号 |
US20030437119 |
申请日期 |
2003.05.14 |
| 申请人 |
SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER |
发明人 |
NAKAJIMA ANRI |
| 分类号 |
H01L21/31;H01L21/28;H01L21/316;H01L21/318;H01L21/334;H01L21/8242;H01L27/108;H01L29/51;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/31 |
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