| 发明名称 |
Method of preparing nitrogen containing semiconductor material |
| 摘要 |
A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.
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| 申请公布号 |
US6787385(B2) |
申请公布日期 |
2004.09.07 |
| 申请号 |
US20030344380 |
申请日期 |
2003.02.05 |
| 申请人 |
MIDWEST RESEARCH INSTITUTE |
发明人 |
BARBER GREG D.;KURTZ SARAH R. |
| 分类号 |
C30B25/02;H01L21/205;H01L31/18;(IPC1-7):H01L21/00;H01L31/00 |
主分类号 |
C30B25/02 |
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