发明名称 |
Polishing compound and method for polishing substrate |
摘要 |
A polishing slurry and a polishing method which are suitably used in a CMP technique for flattening a surface of a substrate in a production process of a semiconductor device. The polishing slurry comprises particles and a medium in which at least a part of the particles are dispersed, wherein the particles are made of at least one of (1) a cerium compound selected from cerium oxide, cerium halide and cerium sulfide and having a density of 3 to 6 g/cm<3 >and an average particle diameter of secondary particles of 1 to 300 nm and (2) a tetravalent metal hydroxide. A polishing method using the polishing slurry takes advantage of a chemical action of particles in the polishing slurry and minimizes a mechanical action of the particles, thereby achieving a decrease in scratches caused by the particles and an increase in polishing rate at the same time.
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申请公布号 |
US6786945(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20030467864 |
申请日期 |
2003.08.13 |
申请人 |
HITACHI CHEMICAL CO., LTD. |
发明人 |
MACHII YOUICHI;KOYAMA NAOYUKI;NISHIYAMA MASAYA;YOSHIDA MASATO |
分类号 |
B24B37/00;C09G1/02;C09K3/14;H01L21/304;H01L21/3105;(IPC1-7):C09G1/02;C09G1/04;B24B1/00 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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