Method of fabricating polysilicon film by nickel/copper induced lateral crystallization

摘要

The present invention relates to a method of fabricating polysilicon film by Nickel and Copper induced lateral crystallization for the TFT-LCD, comprising the step of: a) a thin (~4 nm) Copper and Nickel being evaporated onto the substrate; b) a amorphous-silicon film (~50 nm) being evaporated onto thereof obtained according to a); c) applying annealing at less than 600° C. to thereof obtained according to b) for fast fabricating poly-silicon film. It is approximately 10 times faster than that of Ni induced polysilicon. The present invention is to provide a low-temperature (<600° C.) fast growth rate process to convert the hydrogenated amorphous silicon (a-Si:H) films to polysilicon film for substantially time-saving process and industrial applicability.