Method for manufacturing MTJ cell of magnetic random access memory

摘要

The present invention discloses methods for manufacturing MTJ cell of MRAM wherein two annealing process with different magnitudes of applied magnetic fields are performed. In accordance with the method, the formation process of second pinned magnetic layer comprises a first annealing process and a second annealing process, wherein a magnitude of a magnetic field applied during the first annealing process being larger than that of a magnetic field applied during the second annealing process.