发明名称 Semiconductor device
摘要 A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT (153) compensates for increasing the electric potential of the gate electrode of the TFT (152), and a larger load driving capability is obtained.
申请公布号 US6788108(B2) 申请公布日期 2004.09.07
申请号 US20020202861 申请日期 2002.07.26
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MIYAKE HIROYUKI;SHIONOIRI YUTAKA
分类号 H01L51/50;G09G3/20;G09G3/30;G09G3/32;G09G3/36;G11C19/00;G11C19/28;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786;H03K19/017;H03K19/0175;H05B33/14;(IPC1-7):H03K19/017 主分类号 H01L51/50
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