Sacrificial feature for corrosion prevention during CMP

摘要

A sacrificial semiconductor feature for preventing corrosion that can result during chemical-mechanical planarization (CMP) is disclosed. A semiconductor device of the invention is fabricated at least in part by performing CMP. The device includes a desired semiconductor feature and a sacrificial semiconductor feature. The desired semiconductor feature may have an unbalanced geometric pattern that includes a metallic line ending in at least one tip. The at least one tip is susceptible to corrosion resulting from performing CMP. The sacrificial semiconductor feature is preferably located off the metallic line of the desired semiconductor feature. The sacrificial semiconductor feature attracts charge induced during CMP that is otherwise attracted by the at least one tip of the desired semiconductor feature. The presence of the sacrificial semiconductor feature thus substantially prevents corrosion of the desired semiconductor feature, including its tip(s).