发明名称 |
Semiconductor device for providing a noise shield |
摘要 |
A first guard ring formed by high concentration ion diffusion is established around the transistor formation region of the semiconductor substrate. A second guard ring is established around the first guard ring with a prescribed gap therebetween. A metal film is formed opposing to each guard ring with an insulating film interposed therebetween; these metal films are connected to the opposing guard rings by interlayer wires. The metal films are each connected to external terminals providing a standard potential by individual metal wires from their respective electrodes.
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申请公布号 |
US6787873(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20030387500 |
申请日期 |
2003.03.14 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
MURAKAMI TADAMASA |
分类号 |
H01L21/3205;H01L21/822;H01L23/52;H01L23/552;H01L23/58;H01L27/04;H01L29/06;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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