| 摘要 |
Pixel electrode fabricating processes are remarkably reduced. A pixel electrode 22 is formed without using any vacuum film forming apparatus by employing a sol-gel material and coating an insulating substrate with the sol-gel material by a spin-coating method or a dipping method, and this allows the fabricating processes to be reduced. During this course, by forming the pixel electrode before the formation of a scanning electrode 23, signal wiring lines and a TFT 24, the electrode wiring and the TFT 24 suffer no thermal damage even if they have a heat resistance temperature of about 350° C. Furthermore, by using a sol-gel material having photosensitivity, patterning processes are reduced by the elimination of the photoresist patterning process and the etching process. An investment for the equipment of a fabricating apparatus can thus be reduced to allow the cost reduction of the active matrix substrate itself to be achieved.
|
