发明名称 |
Thin film magnetic memory device reducing a charging time of a data line in a data read operation |
摘要 |
During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with row and column selecting operations. Charging of the data line is completed early so that it is possible to reduce a time required from start of the data reading to such a state that a passing current difference between the data lines reaches a level corresponding to storage data of the selected memory cell, and the data reading can be performed fast.
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申请公布号 |
US6788569(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20020259471 |
申请日期 |
2002.09.30 |
申请人 |
RENESAS TECHNOLOGY CORP.;MITSUBISHI ELECTRIC ENGINEERING COMPANY LIMITED |
发明人 |
TANIZAKI HIROAKI;HIDAKA HIDETO;OOISHI TSUKASA |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/10;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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