| 发明名称 |
Method for making a semiconductor device having an ultra-thin high-k gate dielectric |
| 摘要 |
A method for making a semiconductor device is described. That method comprises forming on a substrate a buffer layer and a high-k gate dielectric layer, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.
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| 申请公布号 |
US6787440(B2) |
申请公布日期 |
2004.09.07 |
| 申请号 |
US20020315268 |
申请日期 |
2002.12.10 |
| 申请人 |
INTEL CORPORATION |
发明人 |
PARKER CHRISTOPHER G.;KUHN MARKUS;ZHOU YING;HARELAND SCOTT A.;DATTA SUMAN;LINDERT NICK;CHAU ROBERT S.;GLASSMAN TIMOTHY E.;METZ MATTHEW V.;TYAGI SUNIT |
| 分类号 |
H01L21/28;H01L29/51;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
| 代理机构 |
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