发明名称 |
Group-III nitride semiconductor light-emitting device and production method thereof |
摘要 |
A high emission intensity group-III nitride semiconductor light-emitting device obtained by eliminating crystal lattice mismatch with substrate crystal and using a gallium nitride phosphide-based light emitting structure having excellent crystallinity. A gallium nitride phosphide-based multilayer light-emitting structure is formed on a substrate via a boron phosphide (BP)-based buffer layer. The boron phosphide-based buffer layer is preferably grown at a low temperature and rendered amorphous so as to eliminate the lattice mismatch with the substrate crystal. After the amorphous buffer layer is formed, it is gradually converted into a crystalline layer to fabricate a light-emitting device while keeping the lattice match with the gallium nitride phosphide-based light-emitting part.
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申请公布号 |
US6787814(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20010885943 |
申请日期 |
2001.06.22 |
申请人 |
SHOWA DENKO KABUSHIKI KAISHA |
发明人 |
UDAGAWA TAKASHI |
分类号 |
H01L33/00;H01L33/32;(IPC1-7):H01L29/24;H01L29/22;H01L29/221 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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