发明名称 |
Systems and methods for forming dense n-channel and p-channel fins using shadow implanting |
摘要 |
A method facilitates the doping of fins of a semiconductor device that includes a substrate. The method includes forming fin structures on the substrate, where each of the fin structures includes a cap formed on a fin. The method further includes performing a first tilt angle implant process to dope a first one of the fins with n-type impurities and performing a second tilt angle implant process to dope a second one of the fins with p-type impurities.
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申请公布号 |
US6787406(B1) |
申请公布日期 |
2004.09.07 |
申请号 |
US20030638334 |
申请日期 |
2003.08.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HILL WILEY EUGENE;AHMED SHIBLY S.;WANG HAIHONG;YU BIN |
分类号 |
H01L21/265;H01L21/336;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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