发明名称 |
Positive-working photoresist composition and resist patterning method using same |
摘要 |
The invention discloses a crosslinked chemical-amplification positive-working photoresist composition of good pattern resolution and storage stability, which is suitable for pattern size diminution by the thermal flow process after development. The composition comprises: (A) a polyhydroxystyrene resin substituted for a part of the hydroxyl hydrogen atoms by acid-dissociable solubility-reducing groups; (B) a radiation-sensitive acid-generating compound; (C) a polyvinyl ether compound as a crosslinking agent; (D) a carboxylic acid; and (E) an amine compound.
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申请公布号 |
US6787290(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20010928430 |
申请日期 |
2001.08.14 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
NITTA KAZUYUKI;SATO KAZUFUMI;KAWANA DAISUKE;SHIMATANI SATOSHI |
分类号 |
G03F7/039;C08F2/44;C08F257/00;C08K5/00;C08K5/09;C08K5/17;C08L25/18;G03F7/004;G03F7/40;H01L21/027;(IPC1-7):G03C1/73;G03F7/20;G03F7/30 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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