发明名称 Apparatus and techniques for scanning electron beam based chip repair
摘要 A method and apparatus for editing an integrated circuit by bombarding a feature in need of editing with either a low-energy or high-energy electron beam in the presence of a gas whereby low energy electrons activate reactants adsorbed on the surface of the feature in need of editing to form active species on the feature surface. The reaction products from the process can be easily removed whereby IC damage, leakage between metal features, wafer contamination and physical sputtering of undesired material can be significantly minimized while still possessing nanometer-scale spatial resolution. The low energy electrons for activating the reactants adsorbed on the surface of the feature to be edited may be emitted from the electron beam itself or they may be secondary low energy is electrons emitted from the surface of the feature being edited.
申请公布号 US6787783(B2) 申请公布日期 2004.09.07
申请号 US20020321942 申请日期 2002.12.17
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 MARCHMAN HERSCHEL M.;SHORE AARON D.
分类号 H01J37/305;(IPC1-7):A61N5/00 主分类号 H01J37/305
代理机构 代理人
主权项
地址
您可能感兴趣的专利