| 摘要 |
To provide a semiconductor memory device which has high speed operation and multifunctionality, and is suitable for 3D imaging. Data is output to a data terminal in synchronism with a synchronization signal during data read, write data is input via the data terminal in synchronism with a synchronization signal during data write, input of write data via the data terminal is permitted via the data terminal in a first period wherein output of read data to the data terminal should be performed, a second period is provided from when a write specification is issued to when input of write data starts, and a third period is provided during which input of write data is performed.
|
