发明名称 |
Method of making the selection gate in a split-gate flash eeprom cell and its structure |
摘要 |
A method of making the selection gate in a split-gate flash EEPROM cell forms a selection gate on a trench sidewall of a semiconductor substrate to minimize the sidewise dimension of the selection gate and to maintain the channel length. The disclosed method includes the steps of: forming a trench on a semiconductor substrate on one side of a suspending gate structure; forming an inter polysilicon dielectric layer on the sidewall of the suspending gate structure and the trench; and forming a polysilicon spacer on the inter polysilicon dielectric layer as the selection gate. Such a split-gate flash EEPROM cell can produce ballistic hot electrons, improving the data writing efficiency and lowering the writing voltage.
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申请公布号 |
US6787418(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20030355134 |
申请日期 |
2003.01.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHU WEN-TING;YEH JACK;LIN CHRONG-JUNG |
分类号 |
H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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