发明名称 |
Capacitor for semiconductor memory device and method of manufacturing the same |
摘要 |
Disclosed is a capacitor for semiconductor device with a dielectric layer having low leakage current and high dielectric constant. The capacitor includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein the dielectric layer is a TiON layer.
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申请公布号 |
US6787414(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20030335101 |
申请日期 |
2003.01.02 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES |
发明人 |
LEE KEE JEUNG |
分类号 |
H01L27/10;H01L21/02;H01L21/314;H01L21/8242;H01L27/108;H01L29/76;H01L31/119;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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