发明名称 Capacitor for semiconductor memory device and method of manufacturing the same
摘要 Disclosed is a capacitor for semiconductor device with a dielectric layer having low leakage current and high dielectric constant. The capacitor includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein the dielectric layer is a TiON layer.
申请公布号 US6787414(B2) 申请公布日期 2004.09.07
申请号 US20030335101 申请日期 2003.01.02
申请人 HYUNDAI ELECTRONICS INDUSTRIES 发明人 LEE KEE JEUNG
分类号 H01L27/10;H01L21/02;H01L21/314;H01L21/8242;H01L27/108;H01L29/76;H01L31/119;(IPC1-7):H01L21/824 主分类号 H01L27/10
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