| 发明名称 |
Method of manufacturing semiconductor device having buried metal wiring |
| 摘要 |
A metal wiring buried in an insulating layer is subjected to a reducing treatment prior to formation of a second insulating layer on the insulating layer under the condition that the total partial pressure of oxygen and water vapor is sufficiently low.
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| 申请公布号 |
US6787462(B2) |
申请公布日期 |
2004.09.07 |
| 申请号 |
US20020107040 |
申请日期 |
2002.03.28 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IIJIMA TADASHI;WATANABE TADAYOSHI |
| 分类号 |
H01L21/318;H01L21/321;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/318 |
| 代理机构 |
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代理人 |
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