发明名称 |
Semiconductor device having a potential fuse, and method of manufacturing the same |
摘要 |
In a semiconductor device, an active region is formed in a semiconductor substrate separated by a plurality of isolation regions. A plurality of surface insulating films of different thickness are formed separately on the active region. A plurality of conductive films are formed on the respective insulating films. Then, one of the surface insulating film having smaller thickness is caused to break down to work as an electric fuse.
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申请公布号 |
US6787878(B1) |
申请公布日期 |
2004.09.07 |
申请号 |
US20000631623 |
申请日期 |
2000.08.04 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
NAGAI YUKIHIRO;MAMETANI TOMOHARU;NAKATA YOJI;KIDO SHIGENORI;KISHIDA TAKESHI;KINUGASA AKINORI;NISHIMURA HIROAKI;MATSUFUSA JIRO |
分类号 |
H01L27/04;H01L21/82;H01L21/822;H01L23/525;H01L27/02;(IPC1-7):H01L29/00;H01L21/332 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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