发明名称 |
Strained-silicon semiconductor device |
摘要 |
High-speed semiconductor devices with reduced source/drain junction capacitance and reduced junction leakage based on strain silicon technology are fabricated by extending a shallow trench isolation region under the strained silicon layer. Embodiments include anisotropically etching the trench region and subsequently isotropically etching the trench to form laterally extending regions under the strained silicon layer. Embodiments also include filling the trench with an insulating material such that an air pocket is formed in the trench.
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申请公布号 |
US6787423(B1) |
申请公布日期 |
2004.09.07 |
申请号 |
US20020314331 |
申请日期 |
2002.12.09 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
XIANG QI |
分类号 |
H01L21/762;H01L29/06;H01L29/10;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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