| 摘要 |
A photoresist residue remover composition is provided that includes one type or two or more types of fluoride compound and one type or two or more types chosen from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose (but excluding one that includes ammonium fluoride, a polar organic solvent, water, and ascorbic acid). There is also provided use of the photoresist residue remover composition for removing a photoresist residue and a sidewall polymer remaining after dry etching and after ashing.
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