发明名称 |
Test key for detecting overlap between active area and deep trench capacitor of a DRAM and detection method thereof |
摘要 |
A test key disposed on a scribe line of a wafer. The test key includes: two active areas disposed on the substrate; two first deep trench capacitors disposed on the substrate outside the two active areas; a rectangular active word line disposed on the substrate covering the first deep trench capacitors and the active areas; first and second passing word lines disposed on one side of the rectangular active word line and across the parallel active areas; a third passing word line disposed on another side of the rectangular active word line and across another end of the two active areas; two second deep trench capacitors disposed on the substrate under where the two first passing word lines overlap the two active areas; and four contacts disposed on the first active areas between the first and second word lines and between the third and the rectangular active word line.
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申请公布号 |
US6788598(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20030448661 |
申请日期 |
2003.05.30 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
CHANG MING-CHENG;WU TIE-JIANG;LIN JENG-PING;KUO TSE-MAIN;FAN HSU-CHENG |
分类号 |
G11C29/50;H01L21/334;H01L21/8242;H01L23/544;H01L27/02;(IPC1-7):G11C7/00 |
主分类号 |
G11C29/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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