发明名称 |
Test patterns for measurement of low-k dielectric cracking thresholds |
摘要 |
The present invention provides two or more test structures/substructures (100) that are used in a test pattern (500, 600, 700, 800) to determine a cracking threshold for a dielectric material (104) on a substrate. Each test structure/substructure (100) includes two metal structures (102) separated by the dielectric material (104) having a width (G) which is different for each test structure/substructure (100). The cracking threshold will be approximately equal to the largest width (G) of dielectric material (104) that is cracked after processing. The present invention also provides a method for determining the cracking threshold for the dielectric material (104). Two or more test structures (100) are formed on the substrate (402) followed by a determination of whether the dielectric material (104) between the two metal structures (102) for each test structure (100) has cracked during processing (404).
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申请公布号 |
US6787803(B1) |
申请公布日期 |
2004.09.07 |
申请号 |
US20030602970 |
申请日期 |
2003.06.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YAO CHIH-HSIANG;HUANG TAI-CHUN |
分类号 |
H01L23/544;(IPC1-7):H01L21/66 |
主分类号 |
H01L23/544 |
代理机构 |
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地址 |
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