发明名称 Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices
摘要 The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.
申请公布号 US6787288(B2) 申请公布日期 2004.09.07
申请号 US20020291730 申请日期 2002.11.12
申请人 FUJITSU LIMITED 发明人 NOZAKI KOJI;NAMIKI TAKAHISA;YANO EI;KON JUNICHI;KOZAWA MIWA
分类号 G03F7/039;G03F7/004;G03F7/038;H01L21/027;H01L21/28;H01L21/312;(IPC1-7):G03F7/004 主分类号 G03F7/039
代理机构 代理人
主权项
地址